74AHC1GU04 View Datasheet(PDF) - NXP Semiconductors.
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74AHC1GU04 Datasheet PDF : 12 Pages
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NXP Semiconductors
74AHC1GU04
Inverter
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
VOH
HIGH-level VI = VIH or VIL
output voltage IO = −50 µA; VCC = 2.0 V
IO = −50 µA; VCC = 3.0 V
IO = −50 µA; VCC = 4.5 V
IO = −4.0 mA; VCC = 3.0 V
IO = −8.0 mA; VCC = 4.5 V
VOL
LOW-level
VI = VIH or VIL
output voltage IO = 50 µA; VCC = 2.0 V
IO = 50 µA; VCC = 3.0 V
IO = 50 µA; VCC = 4.5 V
IO = 4.0 mA; VCC = 3.0 V
IO = 8.0 mA; VCC = 4.5 V
II
input leakage VI = 5.5 V or GND;
current
VCC = 0 V to 5.5 V
ICC
supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
CI
input
capacitance
Min
1.9
2.9
4.4
2.58
3.94
-
-
-
-
-
-
-
-
25 °C
Typ Max
2.0 -
3.0 -
4.5 -
-
-
-
-
0 0.1
0 0.1
0 0.1
- 0.36
- 0.36
- 0.1
- 1.0
1.5 10
−40 °C to +85 °C
Min Max
1.9
-
2.9
-
4.4
-
2.48
-
3.8
-
-
0.1
-
0.1
-
0.1
-
0.44
-
0.44
-
1.0
-
10
-
10
−40 °C to +125 °C Unit
Min
Max
1.9
-
V
2.9
-
V
4.4
-
V
2.40
-
V
3.70
-
V
-
0.1 V
-
0.1 V
-
0.1 V
-
0.55 V
-
0.55 V
-
2.0 µA
-
40 µA
-
10 pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf = ≤ 3.0 ns. For test circuit see Figure 6.
Symbol Parameter Conditions
Min
tpd
propagation A to Y; see Figure 5
[1]
delay
VCC = 3.0 V to 3.6 V [2]
CL = 15 pF
-
CL = 50 pF
-
VCC = 4.5 V to 5.5 V [3]
CL = 15 pF
-
CL = 50 pF
-
CPD
power
per buffer;
dissipation VI = GND to VCC
capacitance
[4] -
25 °C
Typ Max
3.4 7.1
4.9 10.6
2.6 5.5
3.6 7.0
14 -
−40 °C to +85 °C
Min Max
1.0
8.5
1.0
12.0
1.0
6.0
1.0
8.0
-
-
−40 °C to +125 °C Unit
Min
Max
1.0
10.0 ns
1.0
13.5 ns
1.0
7.0 ns
1.0
9.0 ns
-
-
pF
[1] tpd is the same as tPLH and tPHL.
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
74AHC1GU04_5
Product data sheet
Rev. 05 — 10 July 2007
© NXP B.V. 2007. All rights reserved.
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