AMMC-6345 View Datasheet(PDF) - Avago Technologies
Part Name
Description
Manufacturer
AMMC-6345 Datasheet PDF : 10 Pages
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AMMC-6345 DC Specifications/Physical Properties [1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Id
Drain Supply Current (under any RF power drive and mA
temperature) (Vd=5.0V, Vg set for Id typical)
480
600
Vg
Gate Supply Operating Voltage Id(Q) = 480mA
V
-0.75
-0.55
-0.4
Vp
Pinch-off voltage (Vdd=2.5V, Ids=20mA)
V
-2.5
-1.2
-0.9
qch-b
Thermal Resistance [2] Backside temperature, Tb=25°C °C/W
8.2
Notes:
1. Ambient operational temperature TA=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θch-b) = 9.0°C/W at Tchannel (Tc) = 70°C as measured using infrared microscopy. Thermal Resistance
at backside temperature (Tb) = 25°C calculated from measured data.
AMMC-6345 RF Specifications [3, 4, 5]( TA= 25°C, Vd=5V, Id(Q)=480 mA, Zo=50 Ω)
Symbol Parameters and Test Conditions
Units Minimum
Gain
Small-signal Gain[4]
dB
18
P-1dB
Output Power at 1dB Gain Compression dBm 22.5
P-3dB
Output Power at 3dB Gain Compression dBm
OIP3
Third Order Intercept Point; Df=100MHz; dBm
Pin=-20dBm
RLin
Input Return Loss[4]
dB
RLout
Output Return Loss[4]
dB
Isolation Min. Reverse Isolation
dB
Typical
24
25
32
-17
-13
-40
Maximum
Sigma
0.28
0.20
0.17
0.8
0.92
0.63
1.30
Notes:
3. Small/Large -signal data measured in wafer form TA = 25°C.
4. 100% on-wafer RF test is done at frequency = 25, 30, and 38 GHz. Statistics based on 1500 part sample
5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a
more narrow bandwidth by application of additional conjugate, linearity, or power matching.
LSL
LSL
LSL
18
19
20
22.6 22.7 22.8 22.9 23 23.1 23.2 23.3 23.4
23
24
Gain at 30 GHz
P-1dB at 30 GHz
P-1dB at 38 GHz
Typical distribution of Small Signal Gain and Output Power @P-1dB. Based on 1500 part sampled over several produc-
tion lots.
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