AMMC-6430 View Datasheet(PDF) - Avago Technologies
Part Name
Description
Manufacturer
AMMC-6430 Datasheet PDF : 7 Pages
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AMMC-6430 DC Specifications/Physical Properties [1]
Symbol Parameters and Test Conditions
Units
Min.
Typ.
Max.
Id
Drain Supply Current
mA
(under any RF power drive and temperature)
(Vd=5.0 V, Vg set for Id Typical)
900
1000
Vg
Gate Supply Operating Voltage
(Id(Q) = 900 (mA))
V
-0.9
-0.7
-0.55
qch-b
Thermal Resistance[2]
°C/W
9
(Backside temperature, Tb = 25°C)
Notes:
1. Ambient operational temperature TA=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θch-b) = 10°C/W at Tchannel (Tc) = 107°C as measured using infrared microscopy. Thermal Resistance
at backside temperature (Tb) = 25°C calculated from measured data.
AMMC-6430 RF Specifications [3, 4, 5]
TA= 25°C, Vd=5.5V, Id(Q)=900 mA, Zo=50 Ω
Symbol Parameters and Test
Conditions
Units
Minimum Typical
Maximum
Sigma
Gain
Small-signal Gain[4]
dB
14
17
0.5
P-1dB
Output Power at 1dB dBm 27
28.5
0.38
Gain Compression
P-3dB
Output Power at 3dB dBm
29
0.35
Gain Compression
OIP3
Third Order Intercept dBm
37
0.8
Point; Df=100MHz;
Pin=-20dBm
RLin
Input Return Loss[4]
dB
-15
0.92
RLout
Output Return Loss[4]
dB
-15
0.63
Isolation Min. Reverse Isolation dB
-43
1.8
Notes:
3. Small/Large -signal data measured in wafer form TA = 25°C.
4. 100% on-wafer RF test is done at frequency = 27, 29, and 32 GHz. Statistics based on 1500 part sample
5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a
more narrow bandwidth by application of additional conjugate, linearity, or power matching.
LSL
LSL
LSL
1 1. 1 1. 1 1. 1 1. 18 18.
8
9
8
Gain at 29 GHz
P-1dB at 29 GHz
P-1dB at 33 GHz
Typical distribution of Small Signal Gain and Output Power @P-1dB. Based on 1500 part sampled over several pro-
duction lots.
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