ATF-21170 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
Manufacturer
ATF-21170 Datasheet PDF : 3 Pages
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ATF-21170 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
+7
-4
-8
IDSS
600
175
-65 to +175
Thermal Resistance:
Liquid Crystal Measurement:
θjc = 250°C/W; TCH = 150°C
1␣ µm Spot Size[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 4 mW/°C for
TCASE > 25°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-21170 Noise Parameters: VDS = 3 V, IDS = 20 mA
Freq.
GHz
NFO
dB
Γopt
Mag
Ang
RN/50
0.5
0.4
.93
17
.90
1.0
0.5
.85
35
.70
2.0
0.6
.70
70
.46
4.0
0.9
.59
148
.14
8.0
1.2
.54
-177
.09
ATF-21170 Typical Performance, TA = 25°C
16
25
14
20
GA
12
MSG
10
15
1.5
1.0
NFO
0.5
MAG
10
|S21|2
5
0
0 10 20 30 40 50 60
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 3V, f = 4.0 GHz.
0
0.5
1.0
2.0
4.0 6.0 8.0 10.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
18
15
GA
2.0
12
1.5
9
1.0
6
NFO
0.5
0
1.0
2.0
4.0 6.0 8.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 3V, IDS = 20 mA, TA = 25°C.
30
25
MSG
20
15
MAG
|S21|2
10
5
0
0.5
1.0
2.0
4.0 6.0 8.0 10.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 80 mA.
5-47
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