NES2527B-30 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
NES2527B-30 Datasheet PDF : 4 Pages
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PRELIMINARY DATA SHEET
GaAs MES FET
NES2527B-30
30 W S-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
PACKAGE DIMENSIONS (UNIT: mm)
The NES2527B-30 is power GaAs FET which
provides high output power and high gain in the 2.5 - 2.7
GHz band.
Internal input matching circuits are designed to
24±0.3
20.4
1.0±0.1
SOURCE
GATE
optimize performance. The device has a 0.8 µm gate
length for increased linear gain. To reduce thermal
2.4
resistance, the device uses PHS (Plated Heat Sink)
technology.
17.4±0.3 8.0
The device incorporates WSi (tungsten silicide) gate
R1.2
for high reliability and SiO2 glassivation for surface
stability.
FEATURES
• High output power
• High gain
• High power added efficiency
• Internally matched input
0.1
2.4
0.2 MAX
DRAIN
4.5 MAX
1.8
• High reliability
QUALITY GRADE
Standard
Please refer to “Quality grade on NEC Semiconductor Devices” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGS
−7
V
Gate to Drain Voltage
VGD
−18
V
Drain Current
ID
27
A
Gate Current
IG
180
mA
Total Power Dissipation
PT(*)
110
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
−65 to +175 °C
* TC = 25 °C
The information in this document is subject to change without notice.
Document No. P12381EJ1V0DS00 (1st edition)
Date Published February 1997 N
Printed in Japan
©
1997
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