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BAS40 View Datasheet(PDF) - General Semiconductor

Part Name
Description
Manufacturer
BAS40
GE
General Semiconductor GE
BAS40 Datasheet PDF : 2 Pages
1 2
BAS40 THRU BAS40-06
Schottky Diodes
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
1
2
.037(0.95) .037(0.95)
FEATURES
These diodes feature very low turn-on
voltage and fast switching.
These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
3
3
Top View
1
2
BAS40
Marking: 43
1
2
BAS40-04
Marking: 44
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
3
1
2
BAS40-05
Marking: 45
3
Top View
1
2
BAS40-06
Marking: 46
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE
Ratings at 25 °C ambient temperature unless otherwise specified
Repetitive Peak Reverse Voltage
Forward Continuous Current at Tamb = 25 °C
Surge Forward Current at tp < 1 s, Tamb = 25 °C
Power Dissipation1) at Tamb = 25 °C
Junction Temperature
Storage Temperature Range
1) Device on fiberglass substrate, see layout
Symbol
VRRM
IF
IFSM
Ptot
Tj
TS
Value
Unit
40
V
2001)
mA
6001)
mA
2001)
mW
150
°C
–55 to +150
°C
4/98

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