BCX70J View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BCX70J Datasheet PDF : 7 Pages
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NXP Semiconductors
NPN general purpose transistors
Product data sheet
BCX70 series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter cut-off current
DC current gain
BCX70G
BCX70H
BCX70J
BCX70K
DC current gain
BCX70G
BCX70H
BCX70J
BCX70K
DC current gain
BCX70G
BCX70H
BCX70J
BCX70K
collector-emitter saturation
voltage
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
Ce
emitter capacitance
fT
transition frequency
F
noise figure
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 45 V
IE = 0; VCB = 45 V; Tamb = 150 °C
IC = 0; VEB = 4 V
IC = 10 μA; VCE = 5 V
IC = 2 mA; VCE = 5 V
IC = 50 mA; VCE = 1 V
IC = 10 mA; IB = 0.25 mA
IC = 50 mA; IB = 1.25 mA
IC = 10 mA; IB = 0.25 mA
IC = 50 mA; IB = 1.25 mA
IC = 10 μA; VCE = 5 V
IC = 2 mA; VCE = 5 V
IC = 50 mA; VCE = 1 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz;
note 1
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
MIN.
−
−
−
−
40
30
100
120
180
250
380
50
70
90
100
50
100
600
700
−
550
−
−
−
100
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
520
650
780
1.7
11
250
2
MAX.
20
20
20
−
−
−
−
220
310
460
630
−
−
−
−
350
550
850
1 050
−
750
−
−
−
−
6
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
2004 Jan 16
4
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