Philips Semiconductors
PNP general purpose transistors
Product specification
BCY70; BCY71
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
BCY70
ICBO
collector cut-off current
BCY71
IEBO
emitter cut-off current
hFE
DC current gain
hFE
VCEsat
VBEsat
Cc
Ce
fT
F
DC current gain
BCY70
BCY71
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
BCY70
BCY71
CONDITIONS
IE = 0; VCB = −50 V
IE = 0; VCB = −50 V; Tj = 100 °C
IE = 0; VCB = −45 V
IE = 0; VCB = −45 V; Tj = 100 °C
IC = 0; VEB = −4 V
IC = 0; VEB = −4 V; Tj = 100 °C
IC = 0; VEB = −5 V
VCE = −1 V
IC = −10 µA
IC = −0.1 mA
IC = −1 mA
IC = −50 mA
IC = −10 mA; VCE = −1 V
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = ic = 0; VEB = −1 V; f = 1 MHz
IC = −10 mA; VCE = −20 V; f = 100 MHz
IC = −100 µA; VCE = −5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
MIN.
−
−
−
−
−
−
−
60
80
100
45
100
−
−
−
−600
−
−
−
250
−
−
MAX. UNIT
−20 nA
−5
µA
−20 nA
−5
µA
−10 nA
−2
µA
−500 nA
−
−
−
−
−
500
−250
−500
−900
−1. 2
6
8
−
mV
mV
mV
V
pF
pF
MHz
6
dB
2
dB
Switching times (between 10% and 90% levels)
BCY70
ton
td
tr
toff
ts
tf
turn-on time
delay time
rise time
turn-off time
storage time
fall time
ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA −
−
−
−
−
−
65
ns
35
ns
35
ns
500 ns
420 ns
80
ns
1997 Jul 11
4