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BD378 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
BD378
Iscsemi
Inchange Semiconductor Iscsemi
BD378 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
BD376/378/380
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD376
BD378 IC= -100mA ; IB= 0
BD380
BD376
VCBO
Collector-Base Voltage BD378 IC= -0.1mA ; IE= 0
BD380
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB=B -0.1A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -2V
BD376 VCB= -45V; IE= 0
ICBO
Collector Cutoff Current BD378 VCB= -60V; IE= 0
BD380 VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.15A ; VCE= -2V
hFE-2
DC Current Gain
IC= -1A; VCE= -2V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -0.5A; IB1= -IB2= -50mA;
VCC= -30V
‹ hFE-1 Classifications
6
10
16
25
40-100 63-160 100-250 150-375
MIN TYP. MAX UNIT
-45
-60
V
-80
-50
-75
V
-100
-1.0 V
-1.5 V
-2
-2 μA
-2
-0.1 mA
40
375
20
0.05
μs
0.5
μs
isc Websitewww.iscsemi.cn
2

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