BD787 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

BD787

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BD787

DESCRIPTION

·DC Current Gain-

: hFE= 40~250(Min)@ IC= 0.2A

·Collector-Emitter Sustaining Voltage -

: VCEO(SUS)= 60V(Min)

·Complement to type BD788

APPLICATIONS

·Designed for low power audio amplifier and low current,

high-speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

8

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

1

A

15

W

150

℃

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

8.34 ℃/W

isc Website：www.iscsemi.cn

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