Q62702-F1306 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

Q62702-F1306

NPN Silicon High-Voltage Transistors

Siemens AG 

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

BF 722

Collector-emitter breakdown voltage

IC = 10 µA, RBE = 2.7 kΩ

BF 720

Collector-base breakdown voltage

IC = 10 µA, IB = 0

BF 720

BF 722

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector-base cutoff current

VCB = 200 V, IE = 0

Collector-emitter cutoff current

VCE = 200 V, RBE = 2.7 kΩ

VCE = 200 V, RBE = 2.7 kΩ, TA = 150 ˚C

Emitter-base cutoff current

VEB = 5 V, IC = 0

DC current gain1)

IC = 25 mA, VCE = 20 V

Collector-emitter saturation voltage1)

IC = 30 mA, IB = 5 mA

AC characteristics

Transition frequency

IC = 10 mA, VCE = 10 V, f = 100 MHz

Collector-base capacitance

VCB = 30 V, IC = 0, f = 1 MHz

BF 720

BF 722

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 250

–

V(BR)CER 300

–

V(BR)CB0

300 –

250 –

V(BR)EB0 5

–

ICB0

–

–

ICER

–

–

–

–

IEB0

–

–

hFE

50

–

VCEsat

–

–

–

V

–

–

–

–

10 nA

50 nA

10

µA

10

µA

–

–

0.6 V

fT

–

Cobo

–

100 –

0.8 –

MHz

pF

1) Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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