Q62702-F1312 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

Q62702-F1312

NPN Silicon RF Transistor

Siemens AG 

NPN Silicon RF Transistor

• For low noise, high-gain amplifiers up to 2GHz

• For linear broadband amplifiers

• fT = 7.5 GHz

F = 1.3 dB at 900 MHz

BFQ 193

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code Pin Configuration

BFQ 193

RCs

Q62702-F1312

1=B 2=C 3=E

Package

SOT-89

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS ≤ 93 °C

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Junction - soldering point 1)

Symbol

VCEO

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

RthJS

Values

12

20

2

80

10

600

150

- 65 ... + 150

- 65 ... + 150

Unit

V

mA

mW

°C

≤ 95

K/W

Semiconductor Group

1

Dec-13-1996

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