BFR90(2008) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
BFR90 Datasheet PDF : 9 Pages
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Not for new design, this product will be obsoleted soon
BFR90
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
• High power gain
• Low noise figure
e3
• High transition frequency
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 111 mg
Marking: BFR90
Pinning: 1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Tamb ≤ 60 °C
Storage temperature range
3B
3
2
E
2
1
1C
19039
Electrostatic sensitive device.
Observe precautions for handling.
Symbol
Value
Unit
VCBO
20
V
VCEO
15
V
VEBO
2
V
IC
30
mA
Ptot
300
mW
Tj
150
°C
Tstg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
RthJA
300
K/W
1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 μm Cu
Document Number 85028
Rev. 1.5, 08-Sep-08
www.vishay.com
1
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