BPW36 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
BPW36 Datasheet PDF : 4 Pages
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BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown
IC = 10 mA, Ee = 0
BVCEO
45
—
—
V
Emitter-Base Breakdown
IE = 100 µA, Ee = 0
BVEBO
5.0
—
—
V
Collector-Base Breakdown
IC = 100 µA, Ee = 0
BVCBO
45
—
—
V
Collector-Emitter Leakage
VCE = 10 V, Ee = 0
ICEO
—
—
100
nA
Reception Angle at 1/2 Sensitivity
0
—
±10
—
Deg.
On-State Collector Current BPW36
Ee = 0.5 mW/cm2
VCE = 5 V(7)
IC(ON)
1.0
On-State Collector Current BPW37
Ee = 0.5 mW/cm2
VCE = 5 V(7)
IC(ON)
0.5
Turn-On Time
IC = 2 mA, VCC = 10 V
RL = 100 1
ton
—
Turn-Off Time
IC = 2 mA, VCC = 10 V
RL = 100 1
toff
—
Saturation Voltage
IC = 1.0 mA, Ee = 3.0 mW/cm2 VCE(SAT)
—
—
—
mA
—
—
mA
8
—
µs
7
—
µs
—
0.40
V
TYPICAL PERFORMANCE CURVES
10
Ee = 20 mW/cm2
1.0
10 mW/cm2
5 mW/cm2
2 mW/cm2
0.1
1 mW/cm2
Normalized to:
VCE = 5 V
Ee = 10 mW/cm2
.01
.01
0.1
1.0
10
100
VCE - COLLECTOR TO EMITTER VOLTAGE
Fig. 1 Light Current vs. Collector to Emitter Voltage
10
1.0
0.1
Normalized to:
VCE = 5 V
Ee = 10 mW/cm2
.01
0.1
1.0
10
100
H - TOTAL IRRADIANCE IN mW/cm2
Fig. 2 Normalized Light Current vs. Radiation
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