BS170 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BS170

SIPMOS® Small-Signal Transistor

Siemens AG 

BS 170

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter: ID = 0.2 A, VGS = 10 V

13

Ω

11

RDS (on) 10

9

8

7

98%

6

5

4

typ

3

2

1

0

-60

-20

20

60

100 °C 160

Tj

Gate threshold voltage

VGS (th) = ƒ(Tj)

parameter: VGS = VDS, ID = 1 mA

4.6

V

4.0

VGS(th) 3.6

3.2

2.8

2.4

98%

2.0

1.6

typ

1.2

2%

0.8

0.4

0.0

-60

-20

20

60

100 °C 160

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS=0V, f = 1 MHz

10 3

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

10 1

pF

C

10 2

10 1

Ciss

Coss

Crss

10 0

0

5 10 15 20 25 30 V 40

VDS

Semiconductor Group

7

A

IF

10 0

10 -1

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

10 -2

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

VSD

12/05/1997

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