Q67000-S75 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
Q67000-S75 Datasheet PDF : 9 Pages
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BSP 315
Typ. output characteristics
ID = Æ’(VDS)
parameter: tp = 80 µs
-2.6
Ptot = 2W
A
lkj i h
-2.2
ID -2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
g VGS [V]
a -2.0
b -2.5
c -3.0
f d -3.5
e -4.0
f -4.5
e g -5.0
h -6.0
i -7.0
j -8.0
d k -9.0
l -10.0
c
-0.4
b
-0.2
a
0.0
0.0 -1.0 -2.0 -3.0 -4.0
V
-6.0
VDS
Typ. drain-source on-resistance
RDS (on) = Æ’(ID)
parameter: tp = 80 µs, Tj = 25 °C
2.6
Ωa
2.2
RDS (on) 2.0
bc
d
e
f
1.8
1.6
1.4
1.2
g
1.0
h
0.8
i
kj
0.6
0.4 VGS [V] =
0.2
abcdef ghi j k
-2.05 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0
0.0
0.0 -0.4 -0.8 -1.2 -1.6
A
-2.4
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
-6.0
A
-5.0
ID
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
Semiconductor Group
6
1.1
S
gfs
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
-1.0 -2.0 -3.0 -4.0 A -5.5
ID
Sep-12-1996
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