BSS138 View Datasheet(PDF) - TY Semiconductor

Part Name

Description

Manufacturer

BSS138

N-Channel MOSFET

TY Semiconductor 

SSMMDD TTyyppee

MMOOSSFFEETT

Product specification

BSS138

■ Features

● VDS (V) = 50V

● ID = 0.22 A

● RDS(ON) ≤ 3.5Ω (VGS = 10V)

● RDS(ON) ≤ 6Ω (VGS = 4.5V)

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

Unit: mm

0.1+0.05

-0.01

11..BGasae te

22.ESmoituterrce

33..cDollreactionr

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-to-source voltage

Gate-to-source voltage

Drain Current

– Continuous

– Pulsed

Total power dissipation @ TA = 25℃

Thermal resistance,junction-to-ambient

Operating and storage temperature range

Symbol

VDSS

VGS

ID

PD

RθJA

TJ, Tstg

Rating

50

±20

200

800

300

417

-55 to 150

Unit

V

V

mA

mA

mW

℃/W

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-to-source breakdown voltage

Zero Gate Voltage Drain Current

Gate-source leakage current

Gate-source threshold voltage

Static drain-to-source on-rResistance

Forward transconductance

Input capacitance

Output capacitance

Transfer capacitance

Turn-on delay time

Turn-off delay time

■ Marking

Marking

J1

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

td(off)

Test conditons

VGS = 0 V, ID = 250 μA

VDS = 50 V, VGS = 0

VGS = ± 20 V, VDS = 0

VDS = VGS, ID = 1.0 mA

VGS = 10V, ID = 0.22A

VGS = 4.5V, ID = 0.22A

VDS = 25 V, ID = 200 mA, f = 1.0 kHz

VDS = 10 V, VGS = 0, f = 1 MHz

VDD = 30 V, ID = 0.2 A,RGEN = 50

Min Typ Max Unit

50

V

0.5 μA

±0.1 μA

0.8

1.5 V

3.5 Ω

6

Ω

100

mS

50 pF

25 pF

8 pF

20 ns

20 ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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