Q62702-S633 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
Q62702-S633 Datasheet PDF : 7 Pages
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BSS 92
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
-0.34
A
Ptot = 1W
-0.28
ID
-0.24
lkj i h
-0.20
-0.16
-0.12
-0.08
g
VGS [V]
a
-2.0
b
-2.5
fc
-3.0
d
-3.5
e
-4.0
f
-4.5
eg
-5.0
h
-6.0
i
-7.0
d
j
-8.0
k
-9.0
l
c
-10.0
-0.04
0.00
0
-1 -2
-3 -4 -5
b
a
-6 -7 -8 V -10
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
65
Ωa b
c
d
e
f
55
RDS (on) 50
45
40
35
30
25
20
15
10 VGS [V] =
g
h
ki jl
5
abcdef ghi j kl
-2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0
0
0.00 -0.04 -0.08 -0.12 -0.16 -0.20 A -0.26
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
VDS≥ 2 x ID x RDS(on)max
-0.40
A
ID
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
0.20
S
gfs 0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A
ID
-0.40
Semiconductor Group
6
12/05/1997
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