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BTS442E2 View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BTS442E2
Siemens
Siemens AG Siemens
BTS442E2 Datasheet PDF : 13 Pages
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Electrical Characteristics
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
BTS 442 E2
Symbol
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 5 A
Tj=25 °C: RON
-- 15 18 m
Tj=150 °C:
28 35
Nominal load current (pin 3 to 5)
IL(ISO)
17 21
-- A
ISO Proposal: VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or IL(GNDhigh)
--
GND pulled up, VIN= 0, see diagram page 7,
Tj =-40...+150°C
Turn-on time
to 90% VOUT: ton
100
Turn-off time
to 10% VOUT: toff
10
--
1 mA
-- 350 µs
-- 130
RL = 12 , Tj =-40...+150°C
Slew rate on
dV /dton
0.2
--
2 V/µs
10 to 30% VOUT, RL = 12 , Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 , Tj =-40...+150°C
-dV/dtoff
0.4
--
5 V/µs
Operating Parameters
Operating voltage 5)
Tj =-40...+150°C: Vbb(on)
4.5
-- 42 V
Undervoltage shutdown
Tj =-40...+150°C: Vbb(under)
2.4
-- 4.5 V
Undervoltage restart
Tj =-40...+150°C: Vbb(u rst)
--
-- 4.5 V
Undervoltage restart of charge pump
Vbb(ucp)
see diagram page 12
Tj =-40...+150°C:
-- 6.5 7.5 V
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Vbb(under)
-- 0.2
-- V
Overvoltage shutdown
Tj =-40...+150°C: Vbb(over)
42
-- 52 V
Overvoltage restart
Tj =-40...+150°C: Vbb(o rst)
42
--
-- V
Overvoltage hysteresis
Tj =-40...+150°C: Vbb(over)
-- 0.2
-- V
Overvoltage protection6)
Tj =-40°C: Vbb(AZ)
60
--
-- V
Ibb=40 mA
Tj =25...+150°C:
63 67
Standby current (pin 3)
Tj=-40...+25°C: Ibb(off)
-- 12 25 µA
VIN=0
Tj=150°C:
-- 18 60
Leakage output current (included in Ibb(off))
IL(off)
--
6
-- µA
VIN=0
Operating current (Pin 1)7), VIN=5 V
IGND
-- 1.1
-- mA
5) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT Vbb - 2 V
6) see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
7) Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
3

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