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BTS612N1E3230 View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BTS612N1E3230 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
BTS 612 N1
Smart Two Channel Highside Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in OFF-state
CMOS compatible input
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection Vbb(AZ)
43 V
Operating voltage
Vbb(on) 5.0 ... 34 V
channels:
each
both
parallel
On-state resistance RON 200 100 m
Load current (ISO) IL(ISO)
2.3 4.4 A
Current limitation IL(SCr)
4
4A
TO-220AB/7
Application
µC compatible power switch with diagnostic
1
Standard
feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
7
7
1
Straight leads
7
1
SMD
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
3 IN1
6 IN2
ESD
5 ST
Voltage
source
V Logic
Voltage
sensor
Logic
PROFET®
Overvoltage
protection
Current
limit 1
Gate 1
protection
Level shifter
Rectifier 1
Charge
pump 1
Charge
pump 2
Limit for
unclamped
ind. loads 1
Open load
Short to Vbb
detection 1
Temperature
sensor 1
Current
limit 2
Gate 2
protection
Level shifter
Rectifier 2
Limit for
unclamped
ind. loads 2
GND
2
Signal GND
Open load
Short to Vbb
detection 2
Temperature
sensor 2
+ V bb
4
OUT1
1
OUT2
7
Load
Load GND
1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1

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