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BTS612N1E3230 View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BTS612N1E3230 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Parameter and Conditions, each channel
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Protection Functions
Initial peak short circuit current limit (pin 4 to 1
or 7)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit
Tj = Tjt (see timing diagrams, page 11)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
IL= 40 mA:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 4 to 2) 9)
Reverse battery voltage drop (Vout > Vbb)
IL = -1.9 A, each channel
Tj=150 °C:
IL(SCp)
IL(SCr)
VON(CL)
Tjt
Tjt
-Vbb
-VON(rev)
BTS 612 N1
Values
Unit
min typ max
5.5 9.5
4.5 7.5
2.5 4.5
--
4
41 47
150
--
-- 10
--
--
-- 610
13 A
11
7
-- A
53 V
-- °C
-- K
32 V
-- mV
Diagnostic Characteristics
Open load detection current
(included in standby current Ibb(off))
Open load detection voltage
IL(off)
Tj=-40..150°C: VOUT(OL)
-- 30
2
3
-- µA
4V
9) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
Semiconductor Group
5

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