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BTS612N1E3230 View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BTS612N1E3230 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Terms
Vbb
I IN1
3 IN1
Ibb
4
Vbb
VON1
VON2
1
I L1
I IN2
OUT1
6 IN2
I ST
VIN1 VIN2 VST 5 ST
PROFET
GND
OUT2
7
2
I L2
VOUT1
R GND
IGND
VOUT2
BTS 612 N1
Inductive and overvoltage output clamp
+ Vbb
VZ
VON
OUT
GND
PROFET
VON clamped to 47 V typ.
Input circuit (ESD protection)
IN
RI
ESD-ZD I
II
GND
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
Status output
Overvolt. and reverse batt. protection
+ Vbb
RI
IN1
IN2
ST
R ST
V Z1
V Z2
Logic
R GND
GND
Signal GND
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 ktyp,
RGND= 150
R ST(ON)
+5V
ST
Open-load detection
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
GND
ESD-
ZD
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 380 at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
OFF
I L(OL)
Logic
unit
Open load
detection
V OUT
Signal GND
Semiconductor Group
8

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