BTS612N1E3230 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BTS612N1E3230 Datasheet PDF : 14 Pages
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GND disconnect
Vbb
3 IN1
6 IN2
ST
5
VIN1VIN2
V
ST
Ibb
4
Vbb
PROFET
1
OUT1
GND
OUT2
7
2
V
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
GND disconnect with GND pull up
3 IN1
VIN1
6 IN2
VIN2
ST
5
4
Vbb
PROFET
1
OUT1
GND
OUT2
7
2
Vbb
VST
VGND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
load
4
3 IN1
high
Vbb
OUT1 1
6 IN2 PROFET
ST
5
GND
OUT2
7
2
Vbb
Normal load current can be handled by the PROFET
itself.
BTS 612 N1
Vbb disconnect with charged external
inductive load
4
3 IN1
high
Vbb
1
OUT1
6 IN2 PROFET
D
OUT2
ST
5
GND
7
2
Vbb
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
E bb
E AS
IN
Vbb
ELoad
PROFET OUT
=
ST
EL
GND
L
{Z L RL
ER
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
∫ EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS=
2IL·R· LL·(Vbb
+
|VOUT(CL)|)·
ln
(1+
IL·RL
|VOUT(CL)|
)
Semiconductor Group
9
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