BTS650PE3180A View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BTS650PE3180A

Smart Highside High Current Power Switch

Siemens AG 

BTS650P

Input circuit (ESD protection)

Current sense status output

V

ZD

Z,IN

V bIN

IN

I

IN

V bb

Rbb

Vbb

R bb

ZD

IIS

V

Z,IS

IS

VIS

R

IS

V IN

When the device is switched off (IIN = 0) the voltage

between IN and GND reaches almost Vbb. Use a

mechanical switch, a bipolar or MOS transistor with

appropriate breakdown voltage as driver.

VZ,IN = 66 V (typ).

Short circuit detection

Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)

(80 ...350 µs).

+ Vbb

VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n

devices are connected in parallel). IS = IL/kilis can be

driven only by the internal circuit as long as Vout - VIS >

5 V. If you want measure load currents up to IL(M), RIS

should

be

less

than

Vbb

IL(M)

-

/

5V

Kilis.

Note: For large values of RIS the voltage VIS can

reach almost Vbb. See also overvoltage protection.

If you don't use the current sense output in your

application, you can leave it open.

Inductive and overvoltage output clamp

+ Vbb

VZ1

VON

VON

Logic

unit

Short circuit

detection

OUT

VZG

IS

DS

OUT

PROFET

VOUT

VON is clamped to VON(Cl) = 42 V typ. At inductive load

switch-off without DS, VOUT is clamped to VOUT(CL) =

-19 V typ. via VZG. With DS, VOUT is clamped to Vbb -

VON(CL) via VZ1. Using DS gives faster deenergizing of

the inductive load, but higher peak power dissipation in

the PROFET.

Semiconductor Group

Page 8

1998-Nov.-2

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