BTS711L1 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BTS711L1 Datasheet PDF : 15 Pages
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Parameter and Conditions, each of the four channels Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Standby current, all channels off
Tj =25°C:
VIN = 0
Tj =150°C:
Leakage output current (included in Ibb(off))
VIN = 0
Operating current 9), VIN = 5V, Tj =-40...+150°C
IGND = IGND1/2 + IGND3/4,
one channel on:
four channels on:
Ibb(off)
IL(off)
IGND
BTS 711 L1
Values
Unit
min typ max
-- 28 60 µA
-- 44 70
--
-- 12 µA
--
2
3 mA
--
8 12
Protection Functions
Initial peak short circuit current limit, (see timing
diagrams, page 12)
each channel, Tj =-40°C: IL(SCp)
5.5 9.5 13 A
Tj =25°C:
4.5 7.5 11
Tj =+150°C:
2.5 4.5
7
two parallel channels
twice the current of one channel
four parallel channels four times the current of one channel
Repetitive short circuit current limit,
Tj = Tjt
each channel IL(SCr)
two parallel channels
four parallel channels
--
4
-- A
--
4
--
--
4
--
(see timing diagrams, page 12)
Initial short circuit shutdown time
Tj,start =-40°C: toff(SC)
Tj,start = 25°C:
-- 5.5
--
4
-- ms
--
(see page 11 and timing diagrams on page 12)
Output clamp (inductive load switch off)10)
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature
Thermal hysteresis
VON(CL)
Tjt
∆Tjt
-- 47
150
--
-- 10
-- V
-- °C
-- K
Reverse Battery
Reverse battery voltage 11)
Drain-source diode voltage (Vout > Vbb)
IL = - 1.9 A, Tj = +150°C
-Vbb
-VON
--
--
-- 610
32 V
-- mV
9) Add IST, if IST > 0
10) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
11) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
Semiconductor Group
5
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