BUV48 View Datasheet(PDF) - Bourns, Inc

Part Name

Description

Manufacturer

BUV48

NPN SILICON POWER TRANSISTORS

Bourns, Inc 

BUV48, BUV48A

NPN SILICON POWER TRANSISTORS

PARAMETER MEASUREMENT INFORMATION

33 Ω

+5V

BY205-400

D45H11

V Gen

68 Ω

BY205-400

33 Ω

1 pF

1 kΩ

0.02 µF

+5V

1 kΩ

2N2222

RB (on)

180 µH

vcc

TUT

BY205-400

Vclamp = 400 V

OBSOLETE 270 Ω BY205-400

1 kΩ

5X BY205-400

Adjust pw to obtain IC

For IC < 6 A VCC = 50 V

For IC ≥ 6 A VCC = 100 V

2N2904

47 Ω

100 Ω

D44H11

VBE(off)

Figure 3. Inductive-Load Switching Test Circuit

A - B = tsv

B - C = trv

IB(on)

IB

A (90%)

Base Current

D - E = tfi

E - F = tti

B - E = txo

C 90%

B 10%

VCE

Collector Voltage

D (90%)

E (10%)

I C(on)

F (2%)

Collector Current

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.

B. Resistors must be noninductive types.

Figure 4. Inductive-Load Switching Waveforms

PRODUCT INFORMATION

4

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

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