BUV47 View Datasheet(PDF) - Power Innovations Ltd
Part Name
Description
Manufacturer
BUV47 Datasheet PDF : 8 Pages
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BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
BUV47
400
VCEO(sus) sustaining voltage
IC = 200 mA L = 25 mH
(see Note 2)
BUV47A
450
Base-emitter
V(BR)EBO breakdown voltage
IE = 50 mA IC = 0
(see Note 3)
7
30
Collector-emitter
ICES cut-off current
ICER
Collector-emitter
cut-off current
IEBO
Emitter cut-off
current
VCE = 850 V
VCE = 1000 V
VCE = 850 V
VCE = 1000 V
VCE = 850 V
VCE = 1000 V
VCE = 850 V
VCE = 1000 V
VEB = 5 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
RBE = 10 Ω
RBE = 10 Ω
RBE = 10 Ω
RBE = 10 Ω
IC = 0
TC = 125°C
TC = 125°C
TC = 125°C
TC = 125°C
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
0.15
0.15
1.5
1.5
0.4
0.4
3.0
3.0
1
Collector-emitter
VCE(sat) saturation voltage
IB =
1 A IC = 5 A
IB = 2.5 A IC = 8 A
(see Notes 3 and 4)
1.5
3.0
Base-emitter
VBE(sat) saturation voltage
IB =
1 A IC = 5 A
(see Notes 3 and 4)
1.6
Current gain
ft
bandwidth product
VCE = 10 V IC = 0.5 A
f = 1 MHz
8
Cob Output capacitance VCB = 20 V IC = 0
f = 0.1 MHz
105
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
V
mA
mA
mA
V
V
MHz
pF
thermal characteristics
RθJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
1 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton
Turn on time
ts
Storage time
tf
Fall time
IC = 5 A
VCC = 150 V
IB(on) = 1 A
IB(off) = -1 A
(see Figures 1 and 2)
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1.0
µs
3.0
µs
0.8
µs
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
tsv
Voltage storage time IC = 5 A
tfi
Current fall time
TC = 100°C
TEST CONDITIONS †
IB(on) = 1 A
VBE(off) = -5 V
(see Figures 3 and 4)
MIN TYP MAX UNIT
4.0
µs
0.4
µs
PRODUCT INFORMATION
2
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