BUV50 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

BUV50

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BUV50

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0; L= 25mH

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 10A; IB= 0.5A

IC= 10A; IB= 0.5A;TC= 100℃

VCE (sat)-2

Collector-Emitter Saturation Voltage

IC= 20A ;IB= 2A

IC= 20A; IB= 2A;TC= 100℃

VBE(sat) Base-Emitter Saturation Voltage

IC= 20A ;IB= 2A

IC= 20A; IB= 2A;TC= 100℃

ICER

Collector Cutoff Current

VCE= VCEV; RBE= 10Ω

VCE= VCEV; RBE= 10Ω; TC=100℃

ICEV

Collector Cutoff Current

VCE= VCEV; VBE= -1.5V

VCE= VCEV; VBE= -1.5V;TC=100℃

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 10A ; VCE= 4V

Switching times Resistive Load

tr

Rise Time

ts

Storage Time

tf

Fall Time

IC= 24A; IB1= 3A; VCC= 100V

VBB= -5V, RB= 0.83Ω; tp= 30μs

MIN MAX UNIT

125

V

7

V

0.8

0.9

V

0.9

1.5

V

1.6

1.7

V

1.0

5.0

mA

1.0

5.0

mA

1.0 mA

20

0.6 μs

1.2 μs

0.3 μs

isc Website：www.iscsemi.cn

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