BYW98-200 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BYW98-200 Datasheet PDF : 5 Pages
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BYW98-200
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ=1
T
IF(av) (A)
δ=tp/T
tp
1.0 1.5 2.0 2.5 3.0 3.5
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
3.5
3.0
Rth(j-a)=Rth(j-l)
2.5
2.0
1.5
Rth(j-a)=75°C/W
1.0
T
0.5
0.0
0
δ=tp/T
tp
25
Tamb(°C)
50
75
100
125
150
Fig. 3: Thermal resistance versus lead length.
Fig. 4: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu) = 35µm).
Rth(°C/W)
90
80
70
60
50
40
30
20
10
0
5
10
Rth(j-a)
Rth(j-l)
Lleads(mm)
15
20
Zth(j-a)/Rth(j-a)
1.00
δ = 0.5
δ = 0.2
0.10 δ = 0.1
Single pulse
0.01
25
1E-1
1E+0
tp(s)
1E+1
T
δ=tp/T
1E+2
tp
5E+2
Fig. 5: Forward voltage drop versus forward
current (maximum values).
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
IFM(A)
70.00
10.00
1.00
Tj=100°C
(Typical values)
Tj=25°C
Tj=100°C
C(pF)
100
50
20
VFM(V)
0.10
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
1
F=1MHz
Tj=25°C
VR(V)
10
100 200
3/5
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