CY20AAJ-8 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

CY20AAJ-8

Nch IGBT for Strobe Flash

Renesas Electronics 

CY20AAJ-8

Electrical Characteristics

Parameter

Collector-emitter breakdown voltage

Collector-emitter leakage current

Gate-emitter leakage current

Gate-emitter threshold voltage

Symbol

V(BR) CES

ICES

IGES

VGE (th)

Min.

450

—

—

—

Typ.

—

—

—

—

Max.

—

10

±0.1

1.5

Unit

V

µA

µA

V

(Tj = 25°C)

Test conditions

IC = 1 mA, VGE = 0 V

VCE = 400 V, VGE = 0 V

VGE = ±6 V, VCE = 0 V

VCE = 10 V, IC = 1 mA

Performance Curves

Maximum Pulse Collector Current

160

Tc = 70°C

CM = 400 µF

RG = 30 Ω

120

80

40

0

0

2

4

6

8

Gate-Emitter Voltage VGE (V)

Rev.2.00 Jul 07, 2006 page 2 of 4

Share Link: