CY20AAJ-8 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

CY20AAJ-8

Nch IGBT for Strobe Flash

Renesas Electronics 

CY20AAJ-8

Application Example

IXe

Vtrig

CM

+

–

VCM

Trigger Signal Vtrig

RG

VCE

VG

IGBT

IGBT

VG

Gate Voltage

VCM

ICP

CM

VGE

Recommended Operation

Conditions

330 V

120 A

300 µF

5V

Maximum Operation

Conditions

350 V

130 A

400 µF

—

Xe Tube Current IXe

Precautions on Usage

1. Gate drive voltage during on-state must be applied to satisfy the rating of maximum pulse collector current. And

peak reverse gate current during turn-off must become less than 0.1 A. (In general, when RG (off) = 30 Ω, it is

satisfied.)

2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to give static

electricity.

3. The operation life should be endured 5,000 shots under the charge current (IXe ≤ 130 A : full luminescence

condition) of main condenser (CM = 400 µF). Repetitive period under the full luminescence conditions is over 3

seconds.

4. Total gate operation time must be applied within 5,000 hours.

Rev.2.00 Jul 07, 2006 page 3 of 4

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