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EGP20A View Datasheet(PDF) - General Semiconductor

Part Name
Description
Manufacturer
EGP20A
GE
General Semiconductor GE
EGP20A Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES EGP20A THRU EGP20G
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
3.0
RESISTIVE OR INDUCTIVE LOAD
0.375" (9.5mm) LEAD LENGTH
2.0
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
90
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
75
60
1.0
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, °C
45
30
15
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50 PULSE WIDTH=300µs
1% DUTY CYCLE
10
TJ=150°C
1
TJ=25°C
0.1
EGP20A - EGP20D
EGP20F & EGP20G
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
140
120
100
80
60
40
20
0
0.1
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
EGP20A - EGP20D
EGP20F & EGP20G
1
10
100
REVERSE VOLTAGE, VOLTS
1,000
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=150°C
1
TJ=125°C
0.1
TJ=75°C
0.01
TJ=25°C
0.001
0
20
40
60
80 100 120 140
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
t, PULSE DURATION, sec.

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