MBM29DL161BE12TN View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MBM29DL161BE12TN

FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

Fujitsu 

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20880-1E

FLASH MEMORY

CMOS

16M (2M × 8/1M × 16) BIT Dual Operation

MBM29DL16XTE/BE -70/90/12

s FEATURES

• 0.23 µm Process Technology

• Simultaneous Read/Write operations (dual bank)

Multiple devices available with different bank sizes (Refer to Table 1)

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

Zero latency between read and write operations

Read-while-erase

Read-while-program

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

s PRODUCT LINE UP

(Continued)

Part No.

Ordering Part No.

VCC = 3.3 V

+0.3 V

–0.3 V

VCC = 3.0 V

+0.6 V

–0.3 V

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

MBM29DL16XTE/BE

70

—

—

—

90

12

70

90

120

70

90

120

30

35

50

s PACKAGES

48-pin plastic TSOP (I)

Marking Side

48-pin plastic TSOP (I)

48-pin plastic FBGA

(FPT-48P-M19)

Marking Side

(FPT-48P-M20)

(BGA-48P-M11)

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