MBM29LV652UE90 View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MBM29LV652UE90

Flash memory CMOS 64M (4M x 16) bit

Fujitsu 

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20886-3E

FLASH MEMORY

CMOS

64M (4M × 16) BIT

MBM29LV652UE90

s GENERAL DESCRIPTION

The MBM29LV652UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device

is designed to MBM29LV652UE be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP

and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard

EPROM programmers.

To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable

(OE) controls.

The MBM29LV652UE is entirely command set compatible with JEDEC single-power-supply Flash standard.

Commands are written to the command register using standard microprocessor write timings. Register contents

serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also

internally latch addresses and data needed for the programming and erase operations.

Typically, each sector can be programmed and verified in about 0.5 seconds.

s PRODUCT LINE UP

Part No.

Power Supply Voltage (V)

Max Address Access Time (ns)

Max CE Access Time (ns)

Max OE Access Time (ns)

MBM29LV652UE90

VCC

=

3.3

V

+0.3 V

–0.3 V

90

90

35

s PACKAGE

63-ball plastic FBGA

(BGA-63P-M02)

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