GE75NF60 View Datasheet(PDF) - GTM CORPORATION

Part Name

Description

Manufacturer

GE75NF60

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM CORPORATION 

ISSUED DATE :2006/12/01

REVISED DATE :

Fig 7. Maximum Safe Operating Area

Fig 8. Single Pulse

Avalanche Capability

Fig 9. Gate Charge Characteristics

Fig 10. Typical Capacitance Characteristics

0.56к/W

Fig 11. Normalized Maximum Transient Thermal Impedance

Important Notice:

Curve

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.

GTM reserves the right to make changes to its products without notice.

GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.

GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.

TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785

China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China

TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165

GE75NF60

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