HMT112R7AFP8C View Datasheet(PDF) - Hynix Semiconductor

Part Name

Description

Manufacturer

HMT112R7AFP8C

DDR3 SDRAM Registered DIMM Based on 1Gb A version

Hynix Semiconductor 

1.2 Key Parameters

MT/s

Grade

tCK(min)

CAS Latency

tRCD(min)

tRP(min)

tRAS(min)

tRC(min)

CL-tRCD-tRP

DDR3-1066

-G7

1.875

7

13.125

13.125

37.5

50.625

7-7-7

DDR3-1333

-H9

1.5

9

13.5

13.5

36

49.5

9-9-9

Unit

ns

tCK

ns

ns

ns

ns

tCK

1.3 Speed Grade

Grade

CL5

CL6

-G7

800

-H9

800

Frequency [MHz]

CL7

1066

1066

CL8

1066

1066

CL9

1333

CL10

1333

Remark

1.4 Address Table

1GB(1Rx8) 2GB(2Rx8) 2GB(1Rx4) 4GB(2Rx4) 4GB(4Rx8) 8GB(4Rx4)

Organization

Refresh

Method

Row Address

Column

Address

Bank Address

128M x 72

8K/64ms

A0-A13

A0-A9

BA0-BA2

256M x 72

8K/64ms

A0-A13

A0-A9

BA0-BA2

256M x 72

8K/64ms

A0-A13

A0-A9,A11

BA0-BA2

512M x 72

8K/64ms

A0-A13

A0-A9,A11

BA0-BA2

512M x 72

8K/64ms

A0-A13

A0-A9

BA0-BA2

1G x 72

8K/64ms

A0-A13

A0-A9,A11

BA0-BA2

Page Size

1KB

1KB

1KB

1KB

1KB

1KB

# of Rank

1

2

1

2

4

4

# of Device

9

18

18

36

36

72

Rev. 0.4 / Jul. 2009

5

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