Q67100-Q1120 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

Q67100-Q1120

3.3V 4M x 4-Bit EDO-Dynamic RAM

Siemens AG 

HYB 3116(7)405BJ/BT(L) -50/-60/-70

3.3V 4Mx4-DRAM

The HYB 3116(7)405BJ/BT(L) is a 16MBit dynamic RAM organized as 4194304 words by 4-bits.

The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well

as advanced circuit techniques to provide wide operating margins, both internally and for the system

user. Multiplexed address inputs permit the HYB 3116(7)405BJ/BT(L) to be packaged in a standard

SOJ 26/24 300 mil or TSOPII-26/24 300 mil wide plastic package. These packages provide high

system bit densities and are compatible with commonly used automatic testing and insertion

equipment. System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct

interfacing with high-performance logic device families.The HYB3116405BTL parts have a very low

power „sleep mode“ supported by Self Refresh.

Ordering Information

Type

HYB 3117405BJ-50

HYB 3117405BJ-60

HYB 3117405BJ-70

HYB 3117405BT-50

HYB 3117405BT-60

HYB 3117405BT-70

HYB 3116405BJ-50

HYB 3116405BJ-60

HYB 3116405BJ-70

HYB 3116405BT-50

HYB 3116405BT-60

HYB 3116405BT-70

HYB 3116405BTL-50

HYB 3116405BTL-60

HYB 3116405BTL-70

Ordering Code

Q67100-Q1119

Q67100-Q1120

Q67100-Q1135

Q67100-Q1136

Q67100-Q1184

Q67100-Q1127

Q67100-Q1128

Q67100-Q1143

Q67100-Q1144

Q67100-Q1186

on request

on request

on request

Package

P-SOJ-26/24-1 300 mil

P-SOJ-26/24-1 300 mil

P-SOJ-26/24-1 300 mil

P-TSOPII-26/24-1 300 mil

P-TSOPII-26/24-1 300 mil

P-TSOPII-26/24-1 300 mil

P-SOJ-26/24-1 300 mil

P-SOJ-26/24-1 300 mil

P-SOJ-26/24-1 300 mil

P-TSOPII-26/24-1 300 mil

P-TSOPII-26/24-1 300 mil

P-TSOPII-26/24-1 300 mil

P-TSOPII-26/24-1 300 mil

P-TSOPII-26/24-1 300 mil

P-TSOPII-26/24-1 300 mil

Descriptions

DRAM (access time 50 ns)

DRAM (access time 60 ns)

DRAM (access time 70 ns)

DRAM (access time 50 ns)

DRAM (access time 60 ns)

DRAM (access time 70 ns)

DRAM (access time 50 ns)

DRAM (access time 60 ns)

DRAM (access time 70 ns)

DRAM (access time 50 ns)

DRAM (access time 60 ns)

DRAM (access time 70 ns)

LP-DRAM (access time 50 ns)

LP-DRAM (access time 60 ns)

LP-DRAM (access time 70 ns)

Semiconductor Group

2

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