Q67100-Q1143 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
Q67100-Q1143 Datasheet PDF : 26 Pages
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HYB 3116(7)405BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
AC Characteristics (cont’d) 5)6)
16E
TA = 0 to 70 °C,VCC = 5 V ± 10 %, tT = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
Output buffer turn-off delay
tOFF
0
13 0
15 0
17 ns 12
Output turn-off delay from OE tOEZ
0
13 0
15 0
17 ns 12
Data to CAS low delay
tDZC
0
–
0
–
0
–
ns 13
Data to OE low delay
tDZO
0
–
0
–
0
–
ns 13
CAS high to data delay
tCDD
10 –
13 –
15 –
ns 14
OE high to data delay
tODD
10 –
13 –
15 –
ns 14
Write Cycle
Write command hold time
tWCH
Write command pulse width
tWP
Write command setup time
tWCS
Write command to RAS lead time tRWL
Write command to CAS lead time tCWL
Data setup time
tDS
Data hold time
tDH
8
–
8
–
0
–
13 –
13 –
0
–
8
–
10 –
10 –
0–
15 –
15 –
0–
10 –
10 –
10 –
0
–
17 –
17 –
0
–
12 –
ns
ns
ns 15
ns
ns
ns 16
ns 16
Read-modify-Write Cycle
Read-write cycle time
tRWC
RAS to WE delay time
tRWD
CAS to WE delay time
tCWD
Column address to WE delay time tAWD
OE command hold time
tOEH
113 –
64 –
27 –
39 –
10 –
138 –
77 –
32 –
47 –
13 –
162 –
89 –
36 –
54 –
15 –
ns
ns 15
ns 15
ns 15
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle tHPC
time
CAS precharge time
tCP
Access time from CAS precharge tCPA
Output data hold time
tCOH
RAS pulse width in EDO mode tRAS
20 –
25 –
30 –
ns
8
–
10 –
10 –
ns
–
27 –
32 –
37 ns 7
5
–
5
–
5
–
ns
50 200k 60 200k 70 200k ns
Semiconductor Group
9
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