HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
AC Characteristics (cont’d) 5)6)
TA = 0 to 70 ˚C, VCC = 3.3 V ± 0.3 V, tT = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
Output buffer turn-off delay
tOFF
0
13 0
15 0
20 ns 12
Write Cycle
Write command hold time
tWCH
8
–
Write command pulse width
tWP
8
–
Write command setup time
tWCS
0
–
Write command to RAS lead time tRWL 13 –
Write command to CAS lead time tCWL 13 –
Data setup time
tDS
0
–
Data hold time
tDH
10 –
10 –
10 –
0
–
15 –
15 –
0
–
10 –
10 –
10 –
0
–
20 –
20 –
0
–
15 –
ns
ns
ns 13
ns
ns
ns 14
ns 14
Read-Modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay
time
tRWC
tRWD
tCWD
tAWD
115 –
50 –
13 –
25 –
130 –
60 –
15 –
30 –
155 –
70 –
20 –
35 –
ns
ns 13
ns 13
ns 13
Fast Page Mode Cycle
Fast page mode cycle time
CAS precharge time
Access time from CAS
precharge
RAS pulse width
CAS precharge to RAS Delay
tPC
35
tCP
10
tCPA
–
tRAS
50
tRHCP 30
–
40
–
10
30 –
200 k 60
–
35
–
45
–
10
35 –
200 k 70
–
40
–
ns
–
ns
40 ns 7
200 k ns
–
ns
Semiconductor Group
8