Q67100-Q2035 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

Q67100-Q2035

4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM

Siemens AG 

HYB 314100BJ/BJL-50/-60/-70

3.3V 4M x 1 DRAM

AC Characteristics (cont’d) 5)6)

TA = 0 to 70 ˚C, VCC = 3.3 V ± 0.3 V, tT = 5 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

-70

min. max. min. max. min. max.

Fast Page Mode Read-Modify-Write Cycle

Fast page mode read-write cycle tPRWC 55 –

60 –

70 –

ns

time

CAS precharge to WE

tCPWD 30

–

35 –

40 –

ns

CAS-before-RAS refresh cycle

CAS setup time

tCSR

10 –

10 –

10 –

ns

CAS hold time

tCHR

10 –

10 –

10 –

ns

RAS to CAS precharge time

tRPC

5

–

5

–

5

–

ns

Write to RAS precharge time

tWRP

10

–

10 –

10 –

ns

Write hold time referenced to

tWRH

10

–

10 –

10 –

ns

RAS

CAS-before-RAS counter test

cycle

CAS precharge time

tCPT

35 –

40 –

40 –

ns

Test Mode

Write command setup time

Write command hold time

tWTS

10

–

10 –

10 –

ns

tWTH

10

–

10 –

10 –

ns

Semiconductor Group

9

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