HYB3164160T-50 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

HYB3164160T-50

4M x 16-Bit Dynamic RAM (4k & 8k Refresh)

Siemens AG 

HYB 3164(5)160T-50/-60

4M x 16-DRAM

This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated in

SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The

circuit and process design allow this device to achieve high performance and low power dissipation.

This DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or

LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)160T to be packaged in a 500

mil wide TSOP-54 plastic package. These packages provide high system bit densities and are

compatible with commonly used automatic testing and insertion equipment.

Ordering Information

Type

HYB 3164160T-50

HYB 3164160T-60

HYB 3165160T-50

HYB 3165160T-60

Ordering

Code

on request

on request

on request

on request

Package

Descriptions

P-TSOPII-54-1

P-TSOPII-54-1

P-TSOPII-54-1

P-TSOPII-54-1

500 mil DRAM (access time 50 ns)

500 mil DRAM (access time 60 ns)

500 mil DRAM (access time 50 ns)

500 mil DRAM (access time 60 ns)

Pin Names

A0-A12

A0-A11

RAS

OE

I/O1-I/O16

UCAS,LCAS

WRITE

Vcc

Vss

Address Inputs for HYB 3164160T

Address Inputs for HYB 3165160T

Row Address Strobe

Output Enable

Data Input/Output

Column Address Strobe

Read/Write Input

Power Supply ( + 3.3V)

Ground

Semiconductor Group

6

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