HYM361120GS-70 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

HYM361120GS-70

1M × 36-Bit Dynamic RAM Module (2M × 18-Bit Dynamic RAM Module)

Siemens AG 

HYM 361120/40S/GS-60/-70

1M × 36-Bit

AC Characteristics 4) 5)

TA = 0 to 70 ˚C; VCC = 5 V ± 10 %; tT = 5 ns

Parameter

Symbol

Limit Values

Unit

HYM

HYM

361120/40S/GS-60 361120/40S/GS-70

min.

max.

min.

max.

Random read or write cycle time tRC

110

–

130

–

ns

Fast page mode cycle time

tPC

40

–

45

–

ns

Access time from RAS

t 6) 11) 12)

RAC

–

60

–

70

ns

Access time from CAS

t 6) 11)

CAC

–

15

–

20

ns

Access time from column

tAA

–

address

6) 12)

30

–

35

ns

Access time from CAS

prech arge

tCPA

–

6)

35

–

40

ns

CAS to output in low-Z

t 6)

CLZ

0

Output buffer turn-off delay

t 7)

OFF

0

Transition time (rise and fall)

t 5)

T

3

RAS precharge time

tRP

40

RAS pulse width

tRAS

60

RAS pulse width

(fast page mode)

tRASP

60

–

0

20

0

50

3

–

50

10000 70

200000 70

–

ns

20

ns

50

ns

–

ns

10000 ns

200000 ns

CAS precharge to RAS delay

tRHCP

35

RAS hold time

tRSH

15

CAS hold time

tCSH

60

CAS pulse width

tCAS

15

RAS to CAS delay time

t 11)

RCD

20

RAS to column address

delay time

tRAD

15

12)

–

40

–

20

–

70

10000 20

45

20

30

15

–

ns

–

ns

–

ns

10000 ns

50

ns

35

ns

CAS to RAS precharge time

tCRP

5

–

5

–

ns

CAS precharge time

(fast page mode)

tCP

10

–

10

–

ns

Row address setup time

tASR

0

–

0

–

ns

Row address hold time

tRAH

10

–

10

–

ns

Column address setup time

tASC

0

–

0

–

ns

Column address hold time

tCAH

15

–

15

–

ns

.

Semiconductor Group

597

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