INT200TFI2 View Datasheet(PDF) - Power Integrations, Inc

Part Name

Description

Manufacturer

INT200TFI2

Low-side Drive and High-side Control with Simultaneous Conduction Lockout

Power Integrations, Inc 

INT200 Functional Description

5 V Regulator

The 5 V linear regulator circuit provides

the supply voltage for the control logic

and high-voltage level shift circuit. This

allows the logic section to be directly

compatible with 5 V CMOS logic

without the need of an external 5 V

supply.

Undervoltage Lockout

The undervoltage lockout circuit disables

the LS OUT pin and both HSD pins

whenever the V power supply falls

DD

below typically 9.0 V, and maintains

this condition until the VDD power supply

rises above typically 9.35 V. This

guarantees that both MOSFETs will

remain off during power-up or fault

conditions.

HSD1/HSD2

The HSD1 and HSD2 outputs are

connected to integrated high-voltage N-

channel MOSFET transistors which

perform the level-shifting function for

communication to the high-side driver.

Controlled current capability allows the

drain voltage to float with the high-side

driver. Two individual channels produce

a true differential communication

channel for accurately controlling the

high-side driver in the presence of fast

moving high-voltage waveforms.

Pulse Circuit

The pulse circuit provides the two high-

voltage level shifters with precise timing

signals. Two pulses are sent over HSD1

to signal the high-side driver to turn on.

One pulse is sent over HSD2 to signal

the high-side driver to turn off. The

combination of differential

communication with the precise timing

provides maximum immunity to noise.

INT200

Conduction Latch

An RS latch prevents the low-side driver

and high-side driver from being on at the

same time, regardless of the input signals.

.

Delay Circuit

The delay circuit matches the low-side

propagation delay with the combination

of the pulse circuit, high voltage level

shift, and high-side driver propagation

delays. This ensures that the low-side

driver and high-side driver will never be

on at the same time during switching

transitions in either direction.

Driver

The CMOS drive circuit provides drive

power to the gate of the MOSFET used

on the low side of the half bridge circuit.

The driver consists of a CMOS buffer

capable of driving an external transistor

gate at up to 15 V.

HV+

C2

D1

VDD

C1

HS IN

LS IN

HV-

8

76

5

R2

INT201

1

23

4

8

76

5

INT200

1

23

4

R1

Figure 4. Using the INT200 and INT201 in a 3-phase Configuration.

Q2

PHASE 2

PHASE 1

Q1

3-PHASE

BRUSHLESS

DC MOTOR

PHASE 3

PI-1461-042695

3 F

1/96

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