SLD131UL View Datasheet(PDF) - Sony Semiconductor

Part Name

Description

Manufacturer

SLD131UL

GaAlAs Laser Diode

Sony Semiconductor 

Power dependence of far field pattern

(Parallel to junction)

Tc = 25°C

SLD131UL

Power dependence of far field pattern

(Perpendicular to junction)

Tc = 25°C

Po = 4mW

Po = 2.5mW

Po = 1mW

–40 –30 –20 –10 0 10 20 30 40

Angle [ ° ]

Temperature dependence of far field pattern

(Parallel to junction)

Po = 2.5mW

Po = 4mW

Po = 2.5mW

Po = 1mW

0

–40 –30 –20 –10 0 10 20 30 40

Angle [ ° ]

Temperature dependence of far field pattern

(Perpendicular to junction)

Po = 2.5mW

Tc = 60°C

Tc = 50°C

Tc = 40°C

Tc = 30°C

Tc = 20°C

Tc = 10°C

–40 –30 –20 –10 0 10 20 30 40

Angle [ ° ]

Tc = 60°C

Tc = 50°C

Tc = 40°C

Tc = 30°C

Tc = 20°C

Tc = 10°C

–40 –30 –20 –10 0 10 20 30 40

Angle [ ° ]

–4–

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