IRF7201TRPBF View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF7201TRPBF

HEXFET® Power MOSFET

International Rectifier 

IRF7201PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

30 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

––– ––– 0.030

––– ––– 0.050

Ω

VGS = 10V, ID = 7.3A „

VGS = 4.5V, ID = 3.7A „

VGS(th)

Gate Threshold Voltage

1.0 ––– ––– V VDS = VGS, ID = 250µA

gfs

Forward Transconductance

5.8 ––– ––– S VDS = 15V, ID = 2.3A

IDSS

Drain-to-Source Leakage Current

––– ––– 1.0

––– ––– 25

µA

VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– -100 nA VGS = -20V

––– ––– 100

VGS = 20V

Qg

Total Gate Charge

––– 19 28

ID = 4.6A

Qgs

Gate-to-Source Charge

––– 2.3 3.5 nC VDS = 24V

Qgd

Gate-to-Drain ("Miller") Charge

––– 6.3 9.5

VGS = 10V, See Fig. 10 „

td(on)

Turn-On Delay Time

––– 7.0 –––

VDD = 15V

tr

td(off)

tf

Rise Time

Turn-Off Delay Time

Fall Time

––– 35 ––– ns ID = 4.6A

––– 21 –––

RG = 6.2Ω

––– 19 –––

RD = 3.2Ω, „

Ciss

Input Capacitance

––– 550 –––

VGS = 0V

Coss

Output Capacitance

––– 260 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 100 –––

ƒ = 1.0MHz, See Fig. 9

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

Min. Typ. Max. Units

Conditions

––– ––– 2.5

––– ––– 58

MOSFET symbol

showing the

A integral reverse

p-n junction diode.

D

G

S

––– ––– 1.2 V TJ = 25°C, IS = 4.6A, VGS = 0V ƒ

––– 48 73 ns TJ = 25°C, IF = 4.6A

––– 73 110 nC di/dt = 100A/µs ƒ

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

‚ VDD = 15V, starting TJ = 25°C, L = 6.6mH

RG = 25Ω, IAS = 4.6A. (See Figure 8)

ƒ ISD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… When mounted on 1 inch square copper board, t<10 sec

2

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