IRFB13N50APBF View Datasheet(PDF) - Kersemi Electronic Co., Ltd.

Part Name

Description

Manufacturer

IRFB13N50APBF

Power MOSFET

Kersemi Electronic Co., Ltd. 

IRFB13N50A, SiHFB13N50A

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

100

10

TJ = 150 °C

1

4.5V

0.1

0.01

0.1

20μs PULSE WIDTH

TJ = 25 °C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

TJ = 25 °C

1

0.1

4

VDS = 50

20μs PULSE WIDTH

6

8

10

12

14

16

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

1

4.5V

0.1

0.1

20μs PULSE WIDTH

TJ = 150 °C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

3.0

ID = 14A

2.5

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

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