IRFF310 View Datasheet(PDF) - Intersil
Part Name
Description
Manufacturer
IRFF310 Datasheet PDF : 7 Pages
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IRFF310
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
G
-
-
1.35
A
D
-
-
5.5
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 1.35A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = 1.35A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 1.35A, dISD/dt = 100A/µs
-
-
1.6
V
-
380
-
ns
-
2.7
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 40V, start TJ = 25oC, L = 44.89µH, RG = 50Ω, peak IAS = 1.35A (See Figures 15, 16).
Typical Performance Curves TC = 25oC, Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10-5
SINGLE PULSE
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (LC)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
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