DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IRFF430 View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRFF430 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRFF430
Electrical Characteristics @ Tj = 25Ā°C (Unless Otherwise Specified)
BVDSS
āˆ†BVDSS/āˆ†TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (ā€˜Millerā€™) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min
500
ā€”
ā€”
ā€”
2.0
1.5
ā€”
ā€”
ā€”
ā€”
19.8
2.2
5.5
ā€”
ā€”
ā€”
ā€”
ā€”
ā€”
ā€”
ā€”
Typ Max Units
ā€”ā€” V
0.43 ā€” V/Ā°C
ā€” 1.5
ā€” 1.725 ā„¦
ā€” 4.0 V
ā€” ā€” S( )
ā€” 25
ā€” 250 ĀµA
ā€” 100
ā€” -100 nA
ā€” 29.5
ā€” 4.6 nC
ā€” 19.7
ā€” 30
ā€” 30
ā€” 55 n s
ā€” 30
7.0 ā€” nH
610
135 ā€” pF
65 ā€”
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25Ā°C, ID = 1.0mA
VGS = 10V, ID =1.5A āžƒ
VGS =10V, ID =2.5A āžƒ
VDS = VGS, ID = 250ĀµA
VDS > 15V, IDS = 1.5A āžƒ
VDS= 400V, VGS=0V
VDS = 400V
VGS = 0V, TJ = 125Ā°C
VGS = 20V
VGS = -20V
VGS =10V, ID =2.5A
VDS= 250V
VDD = 250V, ID = 2.5A,
RG = 7.5ā„¦
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
ISM
VSD
trr
QRR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) āž€
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ā€” ā€” 2.5 A
ā€” ā€” 11
ā€” ā€” 1.4 V
ā€” ā€” 900 nS
ā€” ā€” 7.0 ĀµC
Tj = 25Ā°C, IS =2.5A, VGS = 0V āžƒ
Tj = 25Ā°C, IF =2.5A, di/dt ā‰¤ 100A/Āµs
VDD ā‰¤ 50V āžƒ
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
ā€” ā€” 5.0
Ā°C/W
ā€” ā€” 175
Test Conditions
Typical socket mount.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]