FP4229PBF View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
FP4229PBF Datasheet PDF : 8 Pages
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0.40
ID = 26A
0.30
0.20
0.10
TJ = 125°C
TJ = 25°C
0.00
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
5.0
4.5
4.0
ID = 250µA
3.5
3.0
2.5
2.0
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
1
IRFP4229PbF
1200
1000
800
ID
TOP
5.8A
9.7A
BOTTOM 26A
600
400
200
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Temperature
140
ton= 1µs
120
Duty cycle = 0.25
Half Sine Wave
Square Pulse
100
80
60
40
20
0
25
50
75
100 125 150 175
Case Temperature (°C)
Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
τJ τJ
τ1 τ1
R1R 1
Ci= τi/Ri
Ci= τi/Ri
R2R 2
τ2 τ2
R 3R 3
Ri (°C/W) τι (sec)
τCτ 0.104678 0.000148
τ3τ3
0.222607 0.001836
0.16298 0.01527
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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