FP4229PBF View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

FP4229PBF

PDP SWITCH

International Rectifier 

IRFP4229PbF

D.U.T

+

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

+

‚

-



RG

ƒ

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance

Current Transformer

D.U.T. ISD Waveform

Reverse

-„ +

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform Diode Recovery

dv/dt

*

• dv/dt controlled by RG

• Driver same type as D.U.T.

VDD

Re-Applied

** + Voltage

Body Diode Forward Drop

• ISD controlled by Duty Factor "D"

-

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

*** VGS = 5V for Logic Level Devices

V*G*S*=10V

VDD

ISD

Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs

15V

VDS

L

DRIVER

RG

2V0GVS

tp

D.U.T

IAS

0.01Ω

+

- VDD

A

Fig 19a. Unclamped Inductive Test Circuit

V(BR)DSS

tp

IAS

Fig 19b. Unclamped Inductive Waveforms

L

VCC

DUT

0

1K

Vds

Vgs(th)

Id

Vgs

Fig 20a. Gate Charge Test Circuit

Qgs1 Qgs2 Qgd

Qgodr

Fig 20b. Gate Charge Waveform

6

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